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STR751FR2T6 - Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD

STR751FR2T6_2735291.PDF Datasheet

Part No.

STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR750FV1H6 STR751FR0H6 STR751FR1H6 STR752FR0H6 STR751FR0T6 STR755FV0H6

Description

Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD

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CRS1106 CRS11	Switching Mode Power Supply Applications Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.28 to 7.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.52 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用	Toshiba Semiconductor Toshiba Corporation Toshiba, Corp.
CLL4744A CLL4750A CLL4733A CLL4759A CLL4764A CLL47	1W Zener Diode(齐纳电压24V,1W齐纳二极 24 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE surface mount silicon Zener diodes 75 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE surface mount silicon Zener diodes 82 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 1W Zener Diode(齐纳电压22V,1W齐纳二极 22 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 1W Zener Diode(齐纳电压15V,1W齐纳二极 1W Zener Diode(齐纳电压5.6V,1W齐纳二极 1W Zener Diode(齐纳电压100V,1W齐纳二极 1W Zener Diode(齐纳电压33V,1W齐纳二极 1W Zener Diode(齐纳电压30V,1W齐纳二极 1W Zener Diode(齐纳电压27V,1W齐纳二极 1W Zener Diode(齐纳电压16V,1W齐纳二极 1.0W ZENER DIODE 5% TOLERANCE	Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
1N974B 1N963B 1N965B 1N962B 1N970B 1N960B 1N968D 1	0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -20% tolerance. 0.5W SILICON ZENER DIODES Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管） PC 4/ 5-ST-7,62 .5W硅稳压二极管 Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆) 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. -10% tolerance.	JGD[Jinan Gude Electronic Device] 济南固锝电子器件有限公司 Jinan Gude Electronic Device Co., Ltd. Semtech, Corp. 娴???洪??靛??ㄤ欢?????? Jinan Gude Electronic D...
UT2316L-AE3-R UT2316-AE3-R	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK N-CHANNEL ENHANCEMENT MODE	Unisonic Technologies Co., Ltd. 友顺科技股份有限公司
DF5A3.3FU	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
DF2S5.6FS	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
DF3A8.2FV	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor

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